Datasheet > AOB428

AOB428

更新时间： 2024-11-20 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	129K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOB428 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82

AOB428 数据手册

AOB428

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB428 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications. Standard Product AOB428 is

Pb-free (meets ROHS & Sony 259 specifications).

AOB428L is a Green Product ordering option.

AOB428 and AOB428L are electrically identical.

V_DS(V) = 105V

I_D= 40 A

R_DS(ON)< 28 mΩ (V_GS=10V) @ 20A

R_DS(ON)< 31 mΩ (V_GS= 6V)

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

105

V_GS

Gate-Source Voltage

±25

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

100

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

1.5

Alpha Omega Semiconductor, Ltd.

12 3 4 5

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