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AOB428

更新时间: 2024-11-06 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 129K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOB428 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.82

AOB428 数据手册

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AOB428  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOB428 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in high voltage  
synchronous rectification , load switching and general  
purpose applications. Standard Product AOB428 is  
Pb-free (meets ROHS & Sony 259 specifications).  
AOB428L is a Green Product ordering option.  
AOB428 and AOB428L are electrically identical.  
VDS (V) = 105V  
ID = 40 A  
RDS(ON) < 28 m(VGS =10V) @ 20A  
RDS(ON) < 31 m(VGS = 6V)  
TO-263  
D2-PAK  
D
Top View  
Drain Connected to  
Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
105  
V
VGS  
Gate-Source Voltage  
±25  
40  
V
A
TC=25°C  
Continuous Drain  
Current  
TC=100°C  
ID  
28  
Pulsed Drain Current C  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDM  
IAR  
EAR  
100  
40  
A
80  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
100  
50  
PD  
W
TA=25°C  
2.5  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
9
Max  
11  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
40  
1
50  
Steady-State  
Steady-State  
RθJC  
1.5  
Alpha Omega Semiconductor, Ltd.  

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