Datasheet > AOB420

AOB420

更新时间： 2024-11-05 21:54:51

品牌	Logo	应用领域
阿尔法 - ALPHA		晶体晶体管
页数	文件大小	规格书
8页	325K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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AOB420 数据手册

Rev 2: Oct 2004

AOB420, AOB420L (Green Product)

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB420 uses advanced trench technology to

provide excellent R_DS(ON), low gate chargeand low

gate resistance. This device is ideally suited for use

as a high side switch in CPU core power conversion.

AOB420L (Green Product) is offered in a Lead Free

package.

V_DS(V) = 30V

I_D= 110A

_DS(ON)< 6.5mΩ (V_GS= 10V)

_DS(ON)< 10.0mΩ (V_GS= 4.5V)

TO-263

D2-PAK

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

110

T_C=25°C ^G

T_C=100°C ^B

I_D

I_DM

I_AR

E_AR

Pulsed Drain Current

200

120

100

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

T_A=70°C

3.1

P_DSM

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

8.1

Max

1.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7 8

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