AOB4184

更新时间： 2024-11-06 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	143K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOB4184 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	1.99
Base Number Matches：	1

AOB4184 数据手册

AOB4184

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB4184/L uses advanced trench technology

and design to provide excellent R_DS(ON)with low gate

charge. With the excellent thermal resistance of the

V_DS(V) =40V

I_D= 30 A

(V_GS= 10V)

D²PAK package, this device is well suited for high

current load applications. AOB4184 and AOB4184L

are electrically identical.

_DS(ON)< 10.5 mΩ (V_GS= 10V)

_DS(ON)< 13 mΩ (V_GS= 4.5V)

100% UIS Tested!

-RoHS Compliant

-AOB4184L is Halogen Free

TO-263

D²PAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^G

±20

V_GS

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

I_DM

120

Continuous Drain

Current ^A

Avalanche Current ^C

T_C=25°C

T_C=70°C

I_DSM

I_AR

Repetitive avalanche energy L=100uH ^C

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

R_θJC

2.4

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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