AOB418

更新时间： 2024-11-09 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	112K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOB418 数据手册

AOB418

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB418 uses advanced trench technology to

provide excellent R_DS(ON), low gate chargeand low

gate resistance. This device is ideally suited for use

as a high side switch in CPU core power conversion.

Standard Product AOB418 is Pb-free (meets ROHS

& Sony 259 specifications). AOB418L is a Green

Product ordering option. AOv and AOB418L are

electrically identical.

V_DS(V) = 30V

I_D= 110A (V_GS= 10V)

R_DS(ON)< 6mΩ (V_GS= 10V)

R_DS(ON)< 7.2mΩ (V_GS= 4.5V)

TO-263

D2-PAK

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±12

110

T_A=25°C ^G

T_A=100°C ^B

I_D

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

200

220

T_C=25°C

Power Dissipation ^B

T_C=100°C

100

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

8.1

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

0.84

1.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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