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AOB416L PDF预览

AOB416L

更新时间: 2024-11-20 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 118K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOB416L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Base Number Matches:1

AOB416L 数据手册

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AOB416  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOB416 uses advanced trench technology to  
provide excellent RDS(ON), shoot-through immunity  
and body diode characteristics. This device is ideally  
suited for use as a low side switch in CPU core  
power conversion. Standard Product AOB416 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AOB416L is a Green Product ordering option.  
AOB416 and AOB416L are electrically identical.  
VDS (V) = 30V  
ID = 110A (VGS = 10V)  
R
DS(ON) < 4.5m(VGS = 10V) @ 30A  
DS(ON) < 6.5m(VGS = 4.5V) @ 30A  
R
TO-263  
D2-PAK  
D
S
Top View  
Drain Connected  
to Tab  
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current B,G  
±20  
110  
78  
V
A
TC=25°C G  
TC=100°C B  
ID  
IDM  
IAR  
EAR  
Pulsed Drain Current  
Avalanche Current C  
200  
30  
A
Repetitive avalanche energy L=0.1mH C  
140  
100  
50  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
TA=25°C  
3.1  
PDSM  
W
Power Dissipation A  
TA=70°C  
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
8.1  
Max  
12  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
33  
40  
RθJL  
0.84  
1.5  
Alpha & Omega Semiconductor, Ltd.  

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