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AOB416_09 PDF预览

AOB416_09

更新时间: 2024-11-06 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
7页 273K
描述
100V N-Channel MOSFET

AOB416_09 数据手册

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AOB416  
100V N-Channel MOSFET  
SDMOSTM  
General Description  
Product Summary  
The AOB416 is fabricated with SDMOSTM trench  
technology that combines excellent RDS(ON) with low gate  
charge.The result is outstanding efficiency with controlled  
switching behavior. This universal technology is well suited  
for PWM, load switching and general purpose  
applications.  
VDS  
100V  
45A  
ID (at VGS=10V)  
< 36mΩ  
< 43mΩ  
R
DS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 7V)  
100% UIS Tested  
100% Rg Tested  
TO-263  
D2PAK  
Top View  
Bottom View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
100  
±25  
45  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
ID  
IDM  
IDSM  
TC=25°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
A
TC=100°C  
32  
120  
6.2  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
A
5.0  
IAS, IAR  
28  
A
EAS, EAR  
39  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
150  
75  
PD  
W
TA=25°C  
2.5  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Symbol  
Typ  
11  
Max  
14  
50  
1
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
40  
RθJC  
0.7  
Rev 0: April 2009  
www.aosmd.com  
Page 1 of 7  

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