AOB416

更新时间： 2024-11-20 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	118K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOB416 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	7.84
Base Number Matches：	1

AOB416 数据手册

AOB416

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOB416 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity

and body diode characteristics. This device is ideally

suited for use as a low side switch in CPU core

power conversion. Standard Product AOB416 is Pb-

free (meets ROHS & Sony 259 specifications).

AOB416L is a Green Product ordering option.

AOB416 and AOB416L are electrically identical.

V_DS(V) = 30V

I_D= 110A (V_GS= 10V)

_DS(ON)< 4.5mΩ (V_GS= 10V) @ 30A

_DS(ON)< 6.5mΩ (V_GS= 4.5V) @ 30A

TO-263

D2-PAK

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

110

T_C=25°C ^G

T_C=100°C ^B

I_D

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

200

Repetitive avalanche energy L=0.1mH ^C

140

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

3.1

P_DSM

Power Dissipation ^A

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

8.1

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

0.84

1.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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