AOB414

更新时间： 2024-11-20 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	350K
描述
N-Channel SDMOS TM Power Transistor

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AOB414 数据手册

AOB414

N-Channel SDMOS ^TMPower Transistor

General Description

Product Summary

The AOB414/L is fabricated with SDMOS^TMtrench

technology that combines excellent R_DS(ON)with low gate

charge.The result is outstanding efficiency with controlled

switching behavior. This universal technology is well

suited for PWM, load switching and general purpose

applications.AOB414 and AOB414L are electrically

identical.

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

51A

< 25mΩ

< 31mΩ

100% UIS Tested

100% R_gTested

-RoHS Compliant

TO-263

D²PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±25

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

100

6.6

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

5.3

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

150

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.7

Rev1: May 2012

www.aosmd.com

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