Datasheet > AOB412L

AOB412L

更新时间： 2024-11-06 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	313K
描述
100V N-Channel MOSFET

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技术参数
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AOB412L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.83
Base Number Matches：	1

AOB412L 数据手册

AOT412/AOB412L

100V N-Channel MOSFET

SDMOS ^TM

General Description

Product Summary

The AOT412 & AOB412L are fabricated with SDMOS^TM

trench technology that combines excellent R_DS(ON)with

low gate charge & low Q_rr.The result is outstanding

efficiency with controlled switching behavior. This

universal technology is well suited for PWM, load

switching and general purpose applications.

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

60A

< 15.8mΩ

< 19.4mΩ

R_DS(ON)(at V_GS= 7V)

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

AOB412L

AOT412

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±25

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

140

8.2

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

6.6

I_AS,I_AR

E_AS,E_AR

110

T_C=25°C

Power Dissipation ^B

T_C=100°C

150

P_D

T_A=25°C

2.6

P_DSM

°C

Power Dissipation ^A

1.7

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.7

Rev2: Jul 2011

www.aosmd.com

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