Datasheet > AOB411L

AOB411L

更新时间： 2024-11-06 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	326K
描述
60V P-Channel MOSFET

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AOB411L 数据手册

AOB411L

60V P-Channel MOSFET

General Description

Product Summary

V_DS

The AOB411L combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON).This device is ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

-60V

-78A

I_D(at V_GS=-10V)

< 16.5mΩ

< 22mΩ

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

100% UIS Tested

100% R_gTested

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-60

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

±20

-78

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

-55

-230

T_A=25°C

T_A=70°C

-8

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

-6.5

-77

I_AS, I_AR

E_AS, E_AR

296

187

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.1

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.6

0.8

Rev 0: Mar. 2011

www.aosmd.com

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