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AOB25S65L PDF预览

AOB25S65L

更新时间: 2024-09-15 12:56:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
7页 317K
描述
650V 25A a MOS TM Power Transistor

AOB25S65L 数据手册

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AOT25S65/AOB25S65/AOTF25S65  
650V 25A  
α
MOS TM Power Transistor  
General Description  
Product Summary  
VDS @ Tj,max  
IDM  
RDS(ON),max  
Qg,typ  
750V  
The AOT25S65 & AOB25S65 & AOTF25S65 have been  
fabricated using the advanced αMOSTM high voltage  
process that is designed to deliver high levels of  
performance and robustness in switching applications.  
By providing low RDS(on), Qg and EOSS along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
104A  
0.19Ω  
26.4nC  
5.8µC  
Eoss @ 400V  
100% UIS Tested  
100% Rg Tested  
For Halogen Free add "L" suffix to part number:  
AOT25S65L & AOB25S65 & AOTF25S65L  
Top View  
TO-263  
D2PAK  
D
TO-220  
TO-220F  
D
S
D
S
G
S
G
D
G
G
S
AOT25S65  
AOTF25S65  
AOB25S65  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT25S65/AOB25S65  
AOTF25S65  
AOTF25S65L  
Units  
Drain-Source Voltage  
VDS  
650  
V
Gate-Source Voltage  
VGS  
±30  
25*  
16*  
104  
7
V
A
TC=25°C  
25  
16  
25*  
16*  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
TC=100°C  
IDM  
IAR  
A
Repetitive avalanche energy C  
Single pulsed avalanche energy G  
TC=25°C  
EAR  
EAS  
96  
mJ  
mJ  
W
750  
50  
357  
2.9  
40  
PD  
Power Dissipation B  
Derate above 25oC  
0.4  
100  
0.3  
W/ o  
C
MOSFET dv/dt ruggedness  
Peak diode recovery dv/dt H  
dv/dt  
V/ns  
°C  
20  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds J  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
AOT25S65/AOB25S65  
AOTF25S65  
AOTF25S65L  
Units  
Maximum Junction-to-Ambient A,D  
Maximum Case-to-sink A  
RθJA  
65  
65  
65  
°C/W  
RθCS  
RθJC  
0.5  
--  
--  
°C/W  
°C/W  
Maximum Junction-to-Case  
0.35  
2.5  
3.1  
* Drain current limited by maximum junction temperature.  
Rev1: Mar 2012  
www.aosmd.com  
Page 1 of 7  

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