Datasheet > AOB256L

AOB256L

更新时间： 2024-09-15 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	292K
描述
150V N-Channel MOSFET

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AOB256L

150V N-Channel MOSFET

General Description

Product Summary

V_DS

150V

The AOB256L uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an

extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

19A

< 85mΩ

< 100mΩ

100% UIS Tested

100% R_gTested

TO-263

D²PAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

150

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

13.5

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

2.5

Avalanche Current ^C

I_AS

Avalanche energy L=0.1mH ^C

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

41.5

2.1

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

1.8

Rev 0: August 2012

www.aosmd.com

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