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AOB254L

更新时间: 2024-09-15 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 311K
描述
150V N-Channel MOSFET

AOB254L 数据手册

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AOT254L/AOB254L  
150V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
150V  
The AOT254L/AOB254L uses Trench MOSFET  
technology that is uniquely optimized to provide the most  
efficient high frequency switching performance. Both  
conduction and switching power losses are minimized  
due to an extremely low combination of RDS(ON), Ciss and  
Coss. This device is ideal for boost converters and  
synchronous rectifiers for consumer, telecom, industrial  
power supplies and LED backlighting.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS =4.5V)  
32A  
< 46m  
< 53mΩ  
100% UIS Tested  
100% Rg Tested  
TO-263  
D2PAK  
TO220  
Top View  
Bottom View  
Top View  
Bottom View  
D
D
D
D
D
G
S
G
S
G
D
D
S
G
G
S
S
AOT254L  
AOB254L  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
150  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TC=25°C  
32  
Continuous Drain  
Current  
ID  
TC=100°C  
22.5  
A
Pulsed Drain Current C  
IDM  
70  
4.2  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
A
3.3  
IAS  
12  
A
EAS  
7
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
125  
62.5  
2.1  
PD  
W
TA=25°C  
PDSM  
W
°C  
Power Dissipation A  
1.3  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
12  
Max  
15  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
48  
60  
RθJC  
0.7  
1.2  
Rev 0 : March. 2011  
www.aosmd.com  
Page 1 of 6  

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