Datasheet > AOB20S60

AOB20S60

更新时间： 2024-11-20 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	330K
描述
600V 20A a MOS Power Transistor

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AOB20S60 数据手册

AOT20S60/AOB20S60/AOTF20S60

600V 20A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

R_DS(ON),max

Q_g,typ

700V

80A

The AOT20S60& AOB20S60 & AOTF20S60 have been

fabricated using the advanced αMOS^TMhigh voltage

process that is designed to deliver high levels of

performance and robustness in switching applications.

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

0.199Ω

20nC

4.9µJ

E_oss@ 400V

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT20S60L & AOB20S60L & AOTF20S60L

Top View

TO-220F(3kVAC; 1s)

TO-263

D²PAK

TO-220

AOT20S60

AOTF20S60

AOB20S60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT20S60/AOB20S60

AOTF20S60

AOTF20S60L

Units

Drain-Source Voltage

V_DS

600

Gate-Source Voltage

V_GS

±30

20*

14*

T_C=25°C

20*

14*

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

T_C=100°C

I_DM

I_AR

3.4

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

188

266

2.1

37.8

0.3

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

100

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^H

dv/dt

V/ns

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOT20S60/AOB20S60

AOTF20S60

AOTF20S60L

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

°C/W

Maximum Junction-to-Case

0.47

2.5

3.3

* Drain current limited by maximum junction temperature.

Rev 5: Sep 2012

www.aosmd.com

Page 1 of 7

12 3 4 5 6 7

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