AOT20C60P/AOB20C60P
600V,20A N-Channel MOSFET
General Description
Product Summary
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
VDS @ Tj,max
IDM
700V
80A
RDS(ON),max
Qg,typ
oss @ 400V
< 0.26Ω
52nC
8.2µJ
• High Current Capability
E
Applications
100% UIS Tested
100% Rg Tested
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
TO-263
D
TO-220
D2PAK
D
S
S
G
D
G
G
S
AOT20C60P
AOB20B60P
Orderable Part Number
AOT20C60PL
Package Type
TO-220 Green
TO-263 Green
Form
Tube
Tape & Reel
Minimum Order Quantity
1000
800
AOB20C60PL
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
600
±30
20
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
ID
TC=100°C
A
16
IDM
IAR
80
20
A
EAR
EAS
200
mJ
mJ
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
1599
100
20
dv/dt
V/ns
W
W/°C
°C
463
3.7
PD
Power Dissipation B
Derate above 25°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RθJA
Maximum
65
Units
°C/W
°C/W
°C/W
RθCS
0.5
RθJC
0.27
Rev.2.0: January 2015
www.aosmd.com
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