Datasheet > AOB14N50

AOB14N50

更新时间： 2024-09-15 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	263K
描述
500V, 14A N-Channel MOSFET

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AOB14N50 数据手册

AOT14N50/AOB14N50/AOTF14N50

500V, 14A N-Channel MOSFET

General Description

Product Summary

V_DS

600V@150℃

14A

The AOT14N50 &AOB14N50 & AOTF14N50 have been

fabricated using an advanced high voltage MOSFET

process that is designed to deliver high levels of

performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.38Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT14N50L & AOTF14N50L & AOB14N50L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT14N50

AOTF14N50

AOB14N50

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT14N50/AOB14N50

AOTF14N50

Units

Drain-Source Voltage

V_DS

500

Gate-Source Voltage

V_GS

±30

T_C=25°C

14*

11*

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

T_C=100°C

I_DM

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

540

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

1080

V/ns

W/ ^oC

278

P_D

Power Dissipation ^B

Derate above 25^oC

2.2

0.4

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

300

°C

Parameter

Symbol

R_θJA

AOT14N50/AOB14N50

AOTF14N50

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-sink ^A

R_θCS

0.5

°C/W

Maximum Junction-to-Case

R_θJC

0.45

2.5

* Drain current limited by maximum junction temperature.

Rev6: Jul 2011

www.aosmd.com

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