AO8810L

更新时间： 2024-11-19 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	115K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO8810L 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.5 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

AO8810L 数据手册

AO8810

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8810 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications. It is ESD protected.

AO8810L is offered in a lead-free package. Standard

Product AO8810 is Pb-free (meets ROHS & Sony 259

specifications). AO8810L is a Green Product ordering

option. AO8810 and AO8810L are electrically identical.

V_DS(V) = 20V

I_D= 7 A (V_GS= 4.5V)

R_DS(ON)< 20mΩ (V_GS= 4.5V)

R_DS(ON)< 24mΩ (V_GS= 2.5V)

R_DS(ON)< 32mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

T_A=25°C

T_A=70°C

I_D

5.7

Pulsed Drain Current ^B

I_DM

1.5

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

120

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

中文翻译

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