Datasheet > AO8810A

AO8810A

更新时间： 2024-11-23 20:01:43

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	132K
描述
Transistor

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技术参数
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AO8810A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

AO8810A 数据手册

AO8810A

Common-Drain Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AO8810A uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications. It is ESD protected.

Standard Product AO8810 is Pb-free (meets ROHS & Sony

259 specifications).

V_DS(V) = 20V

I_D= 7 A (V_GS= 4.5V)

_DS(ON)< 20mΩ (V_GS= 4.5V)

R_DS(ON)< 21mΩ (V_GS= 3.8V)

_DS(ON)< 24mΩ (V_GS= 2.5V)

R_DS(ON)< 32mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

±8

T_A=25°C

T_A=70°C

Current

Pulsed Drain Current ^B

I_D

5.7

I_DM

1.5

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

120

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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