Datasheet > AO8810_12

AO8810_12

更新时间： 2024-11-19 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	221K
描述
20V Common-Drain Dual N-Channel MOSFET

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AO8810_12 数据手册

AO8810

20V Common-Drain Dual N-Channel MOSFET

General Description

Product Summary

V_DS

20V

The AO8810 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge. It is ESD protected.

This device is suitable for use as a uni-directional or bi-

directional load switch, facilitated by its common-drain

configuration.

I_D(at V_GS=4.5V)

R_DS(ON)(at V_GS= 4.5V)

R_DS(ON)(at V_GS= 4.0V)

R_DS(ON)(at V_GS= 3.1V)

R_DS(ON)(at V_GS= 2.5V)

< 20mΩ

< 20.5mΩ

< 21.5mΩ

< 23mΩ

< 28mΩ

R_DS(ON)(at V_GS= 1.8V)

ESD protected

TSSOP8

TSSOP-8

Top View

Bottom View

Top View

D1/D2

1.8KΩ

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±8

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

5.7

Pulsed Drain Current ^C

I_DM

P_D

1.5

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

1.0

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

120

R_θJL

Rev 8: Oct. 2012

www.aosmd.com

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