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AO7407 PDF预览

AO7407

更新时间: 2024-10-30 12:24:35
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
5页 351K
描述
20V P-Channel MOSFET

AO7407 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:1.73Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:12079462
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SC-70 3L
Samacsys Released Date:2020-05-25 10:34:57Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1.2 A最大漏极电流 (ID):1.2 A
最大漏源导通电阻:0.135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.63 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AO7407 数据手册

 浏览型号AO7407的Datasheet PDF文件第2页浏览型号AO7407的Datasheet PDF文件第3页浏览型号AO7407的Datasheet PDF文件第4页浏览型号AO7407的Datasheet PDF文件第5页 
AO7407  
20V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-20V  
The AO7407 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with  
gate voltages as low as 1.8V. This device is suitable for  
use as a load switch or in PWM applications.  
ID (at VGS=-4.5V)  
-1.2A  
R
R
R
DS(ON) (at VGS=-4.5V)  
DS(ON) (at VGS =-2.5V)  
DS(ON) (at VGS=-1.8V)  
< 135m  
< 170mΩ  
< 220mΩ  
SC-70  
(SOT-323)  
DD  
SS  
G
GG  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
-20  
±8  
V
V
VGS  
TA=25°C  
TA=70°C  
-1.2  
-1  
Continuous Drain  
Current  
ID  
A
Pulsed Drain Current C  
IDM  
PD  
-10  
0.63  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation B  
0.4  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
160  
180  
130  
Max  
200  
220  
160  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
RθJL  
Rev 4: June 2010  
www.aosmd.com  
Page 1 of 5  

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