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AO7405L PDF预览

AO7405L

更新时间: 2024-11-18 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 112K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO7405L 数据手册

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AO7405  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO7405 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge, and  
operation with gate voltages as low as 2.5V, in the  
small SOT363 footprint. It can be used for a wide  
variety of applications, including load switching, low  
current inverters and low current DC-DC converters.  
Standard Product AO7405 is Pb-free (meets ROHS  
& Sony 259 specifications). AO7405L is a Green  
Product ordering option. AO7405 and AO7405L are  
electrically identical.  
VDS (V) = -30V  
ID = -1.6A (VGS = -10V)  
RDS(ON) < 150m(VGS = -10V)  
RDS(ON) < 200m(VGS = -4.5V)  
RDS(ON) < 280m(VGS = -2.5V)  
SC-70-6  
(SOT-363)  
Top View  
D
S
D
D
S
D
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
-1.6  
V
A
TA=25°C  
TA=70°C  
ID  
-1.3  
Pulsed Drain Current B  
IDM  
-10  
TA=25°C  
TA=70°C  
0.625  
0.4  
PD  
W
Power Dissipation A  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
160  
180  
130  
Max  
200  
220  
160  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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