AO6601

更新时间： 2024-09-13 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	206K
描述
Complementary Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AO6601 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	1.54
最大漏极电流 (Abs) (ID)：	3.4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL AND P-CHANNEL	最大功率耗散 (Abs)：	1.15 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

AO6601 数据手册

AO6601

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 30V

p-channel

-30V

The AO6601 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

Standard Product AO6601 is Pb-free (meets ROHS &

Sony 259 specifications). AO6601L is a Green

Product ordering option. AO6601 and AO6601L are

electrically identical.

I_D= 3.4A (V_GS= 10V) -2.3A (V_GS= -10V)

R_DS(ON)

< 60mΩ (V_GS= 10V) < 135mΩ (V_GS= -10V)

< 75mΩ (V_GS= 4.5V) < 185mΩ (V_GS= -4.5V)

< 115mΩ(V_GS= 2.5V) < 265mΩ (V_GS= -2.5V)

TSOP6

Top View

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±12

-30

±12

V_GS

T_A=25°C

T_A=70°C

3.4

-2.3

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

2.7

-1.8

I_DM

-30

T_A=25°C

T_A=70°C

1.15

0.73

-55 to 150

1.15

P_D

Power Dissipation

0.73

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Typ

Max

110

150

Units

Maximum Junction-to-Ambient ^A

106

°C/W

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

中文翻译

下载PDF

与AO6601相关器件

型号	品牌	获取价格	描述	数据表
AO6601_12	AOS	获取价格	30V Complementary MOSFET
AO6601L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6602	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6602	FREESCALE	获取价格	30V Complementary MOSFET
AO6602_11	AOS	获取价格	30V Complementary MOSFET
AO6602L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6603	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6603L	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
AO6604	FREESCALE	获取价格	N & P-Channel 20-V (D-S) MOSFET High performance trench technology
AO6604	AOS	获取价格	20V Complementary MOSFET