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AO6424 PDF预览

AO6424

更新时间: 2024-10-30 12:24:27
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 273K
描述
30V N-Channel MOSFET

AO6424 数据手册

 浏览型号AO6424的Datasheet PDF文件第2页浏览型号AO6424的Datasheet PDF文件第3页浏览型号AO6424的Datasheet PDF文件第4页浏览型号AO6424的Datasheet PDF文件第5页 
AO6424  
30V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
30V  
The AO6424 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge. This device may  
be used as a load switch or in PWM applications.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS =4.5V)  
5A  
< 31m  
< 43mΩ  
TSOP6  
D
Top View  
Bottom View  
Top View  
D
D
D
D
G
G
S
S
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
5
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
4
A
Pulsed Drain Current C  
IDM  
PD  
20  
1.25  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation B  
0.8  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
82  
Max  
100  
130  
70  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
110  
56  
RθJL  
Rev 1: April 2011  
www.aosmd.com  
Page 1 of 5  

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