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AO6422 PDF预览

AO6422

更新时间: 2024-09-13 12:51:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
4页 246K
描述
20V N-Channel MOSFET

AO6422 数据手册

 浏览型号AO6422的Datasheet PDF文件第2页浏览型号AO6422的Datasheet PDF文件第3页浏览型号AO6422的Datasheet PDF文件第4页 
AO6422  
20V N-Channel MOSFET  
General Description  
The AO6422 uses advanced trench technology to  
provide excellent R  
DS(ON) , low gate charge and  
operation with gate voltages as low as 1.8V. Thisdevice is suitable for general purpose application.  
Features  
VDS = 20V  
ID = 5A  
(VGS = 4.5V)  
RDS(ON) < 44m(VGS = 4.5V)  
RDS(ON) < 55m(VGS = 2.5V)  
RDS(ON) < 72m(VGS = 1.8V)  
D
Top View  
D
D
D
D
1
2
6
5
G
G
3
S
4
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
10 Sec  
Steady State  
20  
Units  
Drain-Source Voltage  
V
Gate-Source Voltage  
VGS  
±8  
V
A
TA=25°C  
TA=70°C  
5
3.9  
3
Continuous Drain  
Current A  
ID  
4.2  
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
2.0  
1.3  
1.1  
0.7  
Power Dissipation A  
PD  
W
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
47.5  
74  
Max  
62.5  
110  
68  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Steady State  
Steady State  
RθJL  
54  
1 / 4  
www.freescale.net.cn  

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