Datasheet > AO6420_12

AO6420_12

更新时间： 2024-09-13 12:24:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	201K
描述
60V N-Channel MOSFET

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AO6420_12 数据手册

AO6420

60V N-Channel MOSFET

General Description

Product Summary

The AO6420 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

V_DS(V) = 60V

I_D= 4.2A (V_GS= 10V)

R_DS(ON)< 60mΩ (V_GS= 10V)

R_DS(ON)< 75mΩ (V_GS= 4.5V)

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

4.2

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A,F

I_D

3.4

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

2.00

P_D

°C

Power Dissipation

1.28

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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