Datasheet > AO5804E

AO5804E

更新时间： 2024-09-16 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	206K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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AO5804E 数据手册

AO5804E

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO5804E/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. AO5804E and AO5804EL are electrically

identical.

V_DS(V) = 20V

I_D= 0.5 A (V_GS= 4.5V)

_DS(ON)< 0.55Ω (V_GS= 4.5V)

R_DS(ON)< 0.68Ω (V_GS= 2.5V)

_DS(ON)< 0.80Ω (V_GS= 1.8V)

-RoHS Compliant

-AO5804EL is Halogen Free

ESD PROTECTED!

SC-89-6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

10 Sec

Steady State

Units

V_DS

Drain-Source Voltage

±8

V_GS

Gate-Source Voltage

Continuous Drain

Current ^{A, F}

T_A=25°C

T_A=70°C

0.5

I_D

0.45

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

0.38

0.24

0.28

0.18

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Symbol

Typ

275

360

300

Max

330

450

350

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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