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AO4840 PDF预览

AO4840

更新时间: 2024-11-20 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 772K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO4840 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:1.53Is Samacsys:N
Base Number Matches:1

AO4840 数据手册

 浏览型号AO4840的Datasheet PDF文件第2页浏览型号AO4840的Datasheet PDF文件第3页浏览型号AO4840的Datasheet PDF文件第4页 
AO4840  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4840 uses advanced trench technology  
MOSFETs to provide excellent RDS(ON) and low gate  
charge. This dual device is suitable for use as a load  
switch or in PWM applications. Standard Product  
AO4840 is Pb-free (meets ROHS & Sony 259  
specifications). AO4840L is a Green Product  
ordering option. AO4840 and AO4840L are  
electrically identical.  
VDS (V) = 40V  
ID = 6A (VGS=10V)  
RDS(ON) < 31m(VGS=10V)  
RDS(ON) < 45m(VGS=4.5V)  
D1  
S1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Max  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
40  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
Pulsed Drain Current B  
6
Continuous Drain  
Current A  
ID  
A
5
20  
IDM  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
Junction and Storage Temperature Range TJ, TSTG  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient  
Symbol  
Typ  
48  
Max  
62.5  
110  
50  
Units  
°C/W  
°C/W  
°C/W  
A
t ≤ 10s  
RθJA  
A
Steady-State  
Steady-State  
Maximum Junction-to-Ambient  
Maximum Junction-to-Lead C  
74  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  

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