Datasheet > AO4771

AO4771

更新时间： 2024-09-13 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	297K
描述
30V P-Channel MOSFET

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AO4771 数据手册

AO4771

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

AO4771 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. A Schottky diode is

provided to facilitate the implementation of a bidirectional

blocking switch,or for "standard buck" DC-DC conversion

applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

-4A

< 68mΩ

< 105mΩ

Schottky

V_KA

30V

I_F

V_F(at I_F=1A)

<0.5V

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

MOSFET

Schottky

Units

Drain-Source Voltage

Gate-Source Voltage

-30

±20

-4

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-3

Pulsed Drain Current ^C

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DM

-18

I_AS, I_AR

E_AS, E_AR

V_KA

Schottky reverse voltage

T_A=25°C

Continuous Forward

Current

I_F

T_A=70°C

T_A=25°C

T_A=70°C

2.5

P_D

°C

Power Dissipation ^B

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter: MOSFET

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead

Steady-State

R_θJL

Parameter: Schottky

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead

t ≤ 10s

62.5

°C/W

R_θJA

R_θJL

Steady-State

Rev 1: Nov. 2010

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