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AO4724 PDF预览

AO4724

更新时间: 2024-10-30 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 112K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4724 数据手册

 浏览型号AO4724的Datasheet PDF文件第2页浏览型号AO4724的Datasheet PDF文件第3页浏览型号AO4724的Datasheet PDF文件第4页 
AO4724  
N-Channel Enhancement Mode Field Effect Transistor  
TM  
SRFET  
General Description  
Features  
SRFET TM The AO4724 uses advanced trench  
VDS (V) = 30V  
technology with a monolithically integrated Schottky  
diode to provide excellent RDS(ON),and low gate charge.  
This device is suitable for use as a low side FET in  
SMPS, load switching and general purpose  
ID = 10.5A  
DS(ON) < 17.5m(VGS = 10V)  
RDS(ON) < 29 m(VGS = 4.5V)  
(VGS = 10V)  
R
applications. Standard product AO4724 is Pb-free  
(meets ROHS & Sony 259 specifications).  
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
D
SOIC-8  
SRFET TM  
Soft Recovery MOSFET:  
Integrated Schottky Diode  
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Maximum  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
10 Sec  
Steady State  
Units  
30  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current AF  
±20  
TA=25°C  
TA=70°C  
10.5  
8.5  
7.7  
6.2  
A
ID  
Pulsed Drain Current B  
IDM  
80  
TA=25°C  
TA=70°C  
3.1  
2.0  
1.7  
1.1  
PD  
W
Power Dissipation  
Avalanche Current B  
IAR  
A
13  
25  
Repetitive avalanche energy 0.3mH B  
EAR  
mJ  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient AF  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
59  
75  
Steady-State  
Steady-State  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

AO4724 替代型号

型号 品牌 替代类型 描述 数据表
AO4752 AOS

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