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AO4722 PDF预览

AO4722

更新时间: 2024-11-27 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
4页 179K
描述
30V N-Channel MOSFET

AO4722 数据手册

 浏览型号AO4722的Datasheet PDF文件第2页浏览型号AO4722的Datasheet PDF文件第3页浏览型号AO4722的Datasheet PDF文件第4页 
AO4722  
30V N-Channel MOSFET  
TM  
SRFET  
General Description  
Product Summary  
SRFET TM The AO4722 uses advanced trench  
technology with a monolithically integrated  
Schottky diode to provide excellent RDS(ON),and  
low gate charge. This device is suitable for use  
as a low side FET in SMPS, load switching and  
general purpose applications.  
VDS (V) = 30V  
ID =11.6A (VGS = 10V)  
RDS(ON) < 14m(VGS = 10V)  
R
DS(ON) < 22m(VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
SRFETTM  
D
D
Soft Recovery MOSFET:  
Integrated Schottky Diode  
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
10 Sec  
Steady State  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
±20  
TA=25°C  
TA=70°C  
11.6  
9.3  
8.5  
6.8  
Continuous Drain  
Current A  
Pulsed Drain Current B  
Avalanche Current B  
IDSM  
IDM  
A
100  
17  
IAR  
Repetitive avalanche energy L=0.3mH B  
EAR  
43  
mJ  
W
TA=25°C  
3.1  
2.0  
1.7  
1.1  
PDSM  
TA=70°C  
Power Dissipation  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
32  
60  
Max  
40  
75  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Maximum Junction-to-Lead C  
RθJL  
17  
24  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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