Datasheet > AO4706

AO4706

更新时间： 2024-11-25 03:45:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	480K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO4706 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79
Base Number Matches：	1

AO4706 数据手册

AO4706

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET ^TMThe AO4706 uses advanced trench

technology with a monolithically integrated Schottky

diode to provide excellent R_DS(ON),and low gate

charge. This device is suitable for use as a low side

FET in SMPS, load switching and general purpose

applications.

V_DS(V) = 30V

I_D=16.5A (V_GS= 10V)

R_DS(ON)< 6.8mΩ (V_GS= 10V)

R_DS(ON)< 8.2mΩ (V_GS= 4.5V)

Standard Product AO4706 is Pb-free (meets ROHS

& Sony 259 specifications).

UIS TESTED!

Rg,Ciss,Coss,Crss Tested

SRFET ^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

±12

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

16.5

13.2

100

Continuous Drain

Current ^AF

Pulsed Drain Current ^B

Avalanche Current ^B

I_DSM

I_DM

I_AR

Repetitive avalanche energy L=0.3mH ^B

E_AR

135

T_A=25°C

3.1

P_DSM

T_A=70°C

Power Dissipation

2.0

Junction and Storage Temperature Range T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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