Datasheet > AO4705L

AO4705L

更新时间： 2024-11-21 03:45:31

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
5页	124K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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AO4705L 数据手册

AO4705

P-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

V_DS(V) = -30V

The AO4705 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. A

Schottky diode is provided to facilitate the

implementation of non-synchronous DC-DC

converters. Standard Product AO4705 is Pb-free

(meets ROHS & Sony 259 specifications). AO4705L

is a Green Product ordering option. AO4705 and

AO4705L are electrically identical.

I_D= -10A (V_GS= -10V)

R_DS(ON)< 14mΩ (V_GS= -20V)

R_DS(ON)< 16mΩ (V_GS= -10V)

SCHOTTKY

V_DS(V) = 30V, I_F= 5A, V_F<0.52V@3A

D/K

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

MOSFET

-30

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

T_A=25°C

T_A=70°C

-10

I_D

Continuous Drain Current^A

-8

Pulsed Drain Current^B

-60

I_DM

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current^A

Pulsed Forward Current^B

3.5

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient^A

Steady-State

°C/W

Maximum Junction-to-Lead^C

Steady-State

Thermal Characteristics Schottky

R_θJL

Maximum Junction-to-Ambient^A

t ≤ 10s

R_θJA

R_θJL

Maximum Junction-to-Ambient^A

Steady-State

Maximum Junction-to-Lead^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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