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AO4702 PDF预览

AO4702

更新时间: 2024-11-06 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体肖特基二极管晶体管场效应晶体管
页数 文件大小 规格书
5页 112K
描述
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4702 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.81
Base Number Matches:1

AO4702 数据手册

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AO4702  
N-Channel Enhancement Mode Field Effect Transistor with  
Schottky Diode  
General Description  
Features  
The AO4702 uses advanced trench technology to provide  
VDS (V) = 30V  
excellent RDS(ON) and low gate charge. A Schottky Diode is  
ID = 11A (VGS = 10V)  
packaged in parallel to improve device performance in  
R
DS(ON) < 16m(VGS = 10V)  
DS(ON) < 25m(VGS = 4.5V)  
synchronous recitification applications, or H-bridge  
configurations. Standard Product AO4702 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4702L is a  
Green Product ordering option. AO4702and AO4702L are  
electrically identical.  
R
SCHOTTKY  
VDS (V) = 30V, IF = 3A, VF<0.5V@1A  
D
K
S
S
S
G
D
D
D
D
G
S
A
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
MOSFET  
Schottky  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
V
VGS  
±20  
11  
TA=25°C  
TA=70°C  
ID  
Continuous Drain Current A  
Pulsed Drain Current B  
9.3  
50  
A
IDM  
VKA  
Schottky reverse voltage  
30  
4.4  
V
A
TA=25°C  
TA=70°C  
IF  
IFM  
Continuous Forward Current A  
Pulsed Diode Forward Current B  
3.2  
30  
3
TA=25°C  
TA=70°C  
3
2
PD  
W
Power Dissipation  
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
°C  
Alpha & Omega Semiconductor, Ltd.  

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