Datasheet > AO4492L

AO4492L

更新时间： 2024-11-20 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	145K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO4492L 数据手册

AO4492L

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4492L uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge.

This device is suitable for high side switch in SMPS and

general purpose applications.

V_DS(V) = 30V

I_D= 13A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 9.5mΩ

_DS(ON)< 14mΩ

- RoHS Compliant

- Halogen Free

100% UIS Tested!

100% R _gTested!

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

±20

T_C=25°C

T_C=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

I_DM

I_AR

100

Repetitive avalanche energy L=0.1mH ^C

E_AR

3.1

T_C=25°C

Power Dissipation ^B

T_C=70°C

P_D

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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