Datasheet > AO4490

AO4490

更新时间： 2024-11-20 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	129K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO4490 数据手册

AO4490

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4490/L uses advanced trench technology to provide

V_DS(V) = 30V

excellent R_DS(ON), low gate charge and operation with gate

I_D= 16A

(V_GS= 10V)

voltages as low as 4.5V, while retaining a 20V V_GS(MAX)

rating. It is ESD protected. This device is suitable for use as

a load switch and general purpose applications. AO4490

and AO4490L are electrically identical.

-RoHS Compliant

_DS(ON)< 7.2mΩ (V_GS= 10V)

_DS(ON)< 10mΩ (V_GS= 4.5V)

ESD protected

-AO4490L is Halogen Free

UIS Tested!

Rg, Ciss,Coss,Crss Tested

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^AF

±20

T_A=25°C

T_A=70°C

I_D

Pulsed Drain Current ^B

Avalanche Current ^G

Repetitive avalanche energy L=0.3mH ^G

I_DM

I_AR

E_AR

120

135

T_A=25°C

2.8

P_D

Power Dissipation

T_A=70°C

1.8

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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