Datasheet > AO4485_10

AO4485_10

更新时间： 2024-09-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	185K
描述
40V P-Channel MOSFET

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AO4485_10 数据手册

AO4485

40V P-Channel MOSFET

General Description

Product Summary

The AO4485 uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge. This

device is suitable for use as a DC-DC converter

application.

V_DS(V) = -40V

I_D= -10A

(V_GS= -10V)

(V_GS= -4.5V)

R_DS(ON)< 15mꢀ

R_DS(ON)< 20mꢀ

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_J=25°C unless otherwise noted

Parameter

Symbol

V_DS

10 Sec

Steady State

-40

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-12

-9

-10

-8

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^G

I_D

I_DM

I_AR

E_AR

-120

-28

Repetitive avalanche energy L=0.3mH ^G

118

T_A=25°C

3.1

2.0

1.7

1.1

Power Dissipation ^A

T_A=70°C

P_D

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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