Datasheet > AO4418_07

AO4418_07

更新时间： 2024-10-30 12:24:23

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	158K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO4418_07 数据手册

AO4418

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4418 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

Standard Product AO4418 is Pb-free (meets ROHS

& Sony 259 specifications).

V_DS(V) = 30V

I_D= 11.5A (V_GS= 20V)

R_DS(ON)< 14mΩ (V_GS= 20V)

_DS(ON)< 17mΩ (V_GS= 10V)

R_DS(ON)< 40mΩ (V_GS= 4.5V)

UIS TESTED!

Rg,Ciss,Coss,Crss Tested

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^AF

Pulsed Drain Current^B

±25

11.5

9.7

T_A=25°C

T_A=70°C

I_D

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

Avalanche Current^B

2.1

I_AR

Repetitive avalanche energy 0.3mH^B

E_AR

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient^AF

Maximum Junction-to-Ambient^A

Maximum Junction-to-Lead^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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