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AO4418 PDF预览

AO4418

更新时间: 2024-11-17 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 110K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4418 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.8
Base Number Matches:1

AO4418 数据手册

 浏览型号AO4418的Datasheet PDF文件第2页浏览型号AO4418的Datasheet PDF文件第3页浏览型号AO4418的Datasheet PDF文件第4页 
AO4418  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4418 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications.Standard Product AO4418 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4418L  
is a Green Product ordering option. AO4418 and  
AO4418L are electrically identical.  
VDS (V) = 30V  
ID = 11.5A (VGS = 20V)  
RDS(ON) < 14m(VGS = 20V)  
R
DS(ON) < 17m(VGS = 10V)  
RDS(ON) < 40m(VGS = 4.5V)  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
Pulsed Drain CurrentB  
±25  
11.5  
9.7  
TA=25°C  
TA=70°C  
A
ID  
IDM  
40  
TA=25°C  
TA=70°C  
3
PD  
W
Power Dissipation  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
59  
Max  
40  
75  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
Maximum Junction-to-LeadC  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  

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