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AO4415 PDF预览

AO4415

更新时间: 2024-11-17 12:51:27
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
4页 172K
描述
30V P-Channel MOSFET

AO4415 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.57
Base Number Matches:1

AO4415 数据手册

 浏览型号AO4415的Datasheet PDF文件第2页浏览型号AO4415的Datasheet PDF文件第3页浏览型号AO4415的Datasheet PDF文件第4页 
AO4415  
30V P-Channel MOSFET  
General Description  
Product Summary  
The AO4415 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge. This device is suitable for use as a load  
switch or in PWM applications.  
VDS (V) = -30V  
ID = -8 A (VGS = -20V)  
RDS(ON) < 26m(VGS = -20V)  
R
DS(ON) < 35m(VGS = -10V)  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-30  
V
Gate-Source Voltage  
VGS  
±25  
V
A
TA=25°C  
TA=70°C  
-8  
-6.6  
Continuous Drain  
Current A  
ID  
Pulsed Drain Current B  
IDM  
-40  
TA=25°C  
TA=70°C  
3
PD  
W
°C  
Power Dissipation A  
2.1  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
24  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
54  
75  
Maximum Junction-to-Lead C  
RθJL  
21  
30  
Alpha & Omega Semiconductor, Ltd.  

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种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C