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AO4414AL PDF预览

AO4414AL

更新时间: 2024-11-19 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 110K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4414AL 数据手册

 浏览型号AO4414AL的Datasheet PDF文件第2页浏览型号AO4414AL的Datasheet PDF文件第3页浏览型号AO4414AL的Datasheet PDF文件第4页 
AO4414A  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4414A uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. The source leads are separated to allow  
a Kelvin connection to the source, which may be  
used to bypass the source inductance. Standard  
Product AO4414A is Pb-free (meets ROHS & Sony  
259 specifications). AO4414AL is a Green Product  
ordering option. AO4414A and AO4414AL are  
electrically identical.  
VDS (V) = 30V  
ID = 8.5A (VGS = 10V)  
R
DS(ON) < 26m(VGS = 10V)  
DS(ON) < 40m(VGS = 4.5V)  
R
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
8.5  
ID  
7.1  
Pulsed Drain Current B  
IDM  
50  
3
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
34  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
62  
75  
RθJL  
18  
24  
Alpha & Omega Semiconductor, Ltd.  

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