Datasheet > AO4202

AO4202

更新时间： 2024-11-21 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	279K
描述
30V N-Channel MOSFET

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AO4202 数据手册

AO4202

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO4202 uses Trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Power losses are

minimized due to an extremely low combination of

R_DS(ON)and C_rss. In addition, switching behavior is well

controlled with a “Schottky style” soft recovery body

diode.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

19A

< 5.3mΩ

< 7mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

130

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 2 : Nov 2010

www.aosmd.com

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