AO3160
600V,0.04A N-Channel MOSFET
General Description
Product Summary
The AO3160 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
700V@150℃
0.04A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
< 500Ω
< 600Ω
SOT23A
D
Top View
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
600
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TA=25°C
TA=70°C
0.04
Continuous Drain
CurrentA,F
ID
0.03
A
Pulsed Drain Current B
IDM
0.12
5
Peak diode recovery dv/dt
TA=25°C
TA=70°C
dv/dt
V/ns
W
1.39
PD
Power Dissipation A
0.89
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t
≤ 10s
90
125
80
RθJA
Steady-State
Steady-State
100
63
RθJL
Rev1: April 2012
www.aosmd.com
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