Datasheet > AN5381

AN5381

更新时间： 2024-11-14 23:30:31

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	61K
描述
Case non-rupture current ratings

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AN5381 数据手册

AN5381 Application Note

AN5381

Case Non-rupture Current Ratings

Application Note

Replaces September 2000, version AN5391-1.0

AN5381-1.1 July 2002

INTRODUCTION

sure. In high power installations where strong magnetic fields

exist, an equipment short circuit or even burn down of the

equipment may be the consequence.

The non-repetitive surge current I_TSMand the I²t value define the

limit of the electrical stress in the forward direction of a thyristor

provided that it is triggered with sufficient gate current. These

characteristics of the semiconductor are used to design short

circuit protection, namely fuses or circuit breakers. By definition,

this level of stress does not destroy the thyristors or diodes.

The case non-rupture current rating is the value of the peak

current, which can flow in the reverse direction through a

failed device, that does not cause a mechanical failure of

the encapsulation of the semiconductor.

If a thyristor becomes short circuit in the forward direction and a

current flows which is greater than the surge current limit,

destruction of the encapsulation will not normally occur until this

current is substantially greater than the surge current. This is

because the thyristor is effectively triggered on by the fault

current and normal injection over a large area of the silicon takes

place.

Destructive tests in the reverse direction of thyristors show a

large variation in the value of the non-rupture current depending

on the location of the destroyed spot on the silicon pellet. The

thick copper electrodes that contact the wafer restrain arcs at

failure sites in the body of the silicon. Arcs at the edge of the

silicon are the worst and produce the lowest values of case non-

rupture current.

If the thyristor becomes defective in the reverse blocking state,

a short circuit current can flow in the reverse direction. The

cathode area that remains undamaged does not take part in

carrying the current. A small edge around the failure melts and

an arc develops inside the case. The intense heat generated by

the arc will lead to either cracking of the ceramic case through

thermal shock or melting of the metal flanges of the encapsula-

tion. Hot plasma then escapes through the break in the enclo-

For large diameter thyristors, the case non-rupture current is

often smaller than the non-repetitive surge on-state current I

TSM

Even for smaller devices, the use in parallel sets can cause

problems

For ease of measurement and also direct comparison with the

surge current, case non-rupture currents are most commonly

quoted for single half sine waves of 50Hz current.

Fig. 1 Fault current flowing back through a failed thyristor

in a 3 phase bridge which shorts out two phases

of the supply

Fig.2 A failed device in a parallel application can

experience a current equal to the full forward current

through all parallel paths

1/3

www.dynexsemi.com

12 3

中文翻译

下载PDF

与AN5381相关器件

型号	品牌	获取价格	描述	数据表
AN5385K	PANASONIC	获取价格	Contour correction IC
AN5390FBS	PANASONIC	获取价格	Color Signal Encoder, Bipolar, PQFP80, 20 X 14 MM, PLASTIC, QFH-80
AN5392FBQ	PANASONIC	获取价格	Luminance and color difference drive/cutoff signal processor IC with I2C bus
AN5394FB	PANASONIC	获取价格	RGB processor IC for the HDTV(Japan) and wide-screen TV
AN5395FBP	PANASONIC	获取价格	Contour correction IC for HDTV
AN540	MICROCHIP	获取价格	Implementing IIR Digital Filters
AN5410	ETC	获取价格	Vertical/Horizontal Deflection Processor
AN5411	ETC	获取价格	Video Deflection Circuit
AN5415	PANASONIC	获取价格	Color TV Deflection Signal Processing Circuits
AN5416	PANASONIC	获取价格	Color TV Deflection Signal Processing Circuits

与AN5381相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

7
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

AN5381

AN5381 数据手册

与AN5381相关器件

与AN5381相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AN5381

AN5381 数据手册

与AN5381相关器件

与AN5381相关文章

您还可以找

您在本页遇到什么问题？