Datasheet > AN4870

AN4870

更新时间： 2024-11-13 23:30:31

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
5页	79K
描述
The effect of temperature on thyristor performance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AN4870 数据手册

AN4870 Application Note

AN4870

Effects Of Temperature On Thyristor Performance

Application Note

Replaces September 2000 version, AN4870-3.0

AN4870-3.1 July 2002

The junction temperature ( T_j) of a power semiconductor in any

particular situation profoundly affects its performance and

reliability.Duringitsworkinglifeathyristorcanexperienceawide

range of temperatures.

thyristor may often have to carry short circuit current for up to

10ms. During this time T_jcan rise transiently to 300 - 500˚C

without the junction being damaged. Peak temperature lags

peakcurrentbytypically2or3millisecondsand, althoughfalling,

is still high at the end of the current pulse. If current is interrupted

by a fuse, little or no reverse voltage appears across the device.

However, the re-application of reverse voltage at such a high

temperature can result in very high reverse recovery power

dissipation. This escalates the junction temperture further and

the subsequent high blocking current leads to reverse voltage

failure by thermal runaway.

Operatingat–40˚Cisnotdamagingbutallowancemustbemade

by the user for increased gate trigger current, latching current

and holding current as well as slow turn-on (see application note

AN4840 Gate Triggering and Gate Characteristics). Working in

the range between room temperature and 125˚C gives the best

compromise between ease of operation and operational life.

T_j= 125˚C is chosen as the design maximum value since above

this, blocking current starts to increase rapidly, thus degrading

voltage rating, see fig.1.

Limitcasesurgecurrentsaredeterminedbyexperimentalmeans

using a 50Hz half sine of current and published in the data sheet.

TheseI_TSMlimitvaluesareusedtodeterminethepeaktemperature

( Using I_TSMfor V_R=0 ) and the temperature at the end of the

current loop ( Using I_TSMfor V_R= 50% V_RRM). These temperatures

are then taken as the limit temperatures for the particular device.

If temperatures in other applications are kept below these, then

the condition will be safe.

The device becomes much more susceptible to over-voltage

transients , high dv/dt, di/dt and surge current. In the case of the

forward blocking junction there is an increasing chance of

forward breakover triggering. For special applications it is

possible to select devices to operate continuously with low

leakage at T_j= 140˚C but such devices may need to be fully

characterised and rated on other parameters at 140˚C.

The method of calculating overload T_jfor the published I_TSM

currents and other overload conditions is discussed below.

Many applications involve infrequent current overloads for short

periods and it is possible to allow T_jto rise well above 125˚C in

such situations. A typical situation is during a load short circuit

when the device is protected by a fuse. In 50Hz circuits the

The overload above assumed a high speed fuse or circuit

breaker will interrupt the supply before forward blocking voltage

appears. Some overloads require that the device survives with

100

V_RRM

V_DRM

100

120

140

160

180

200

Thyristor junction temperature - (˚C)

Fig.1 Thyristor de-rating curves

1/5

www.dynexsemi.com

12 3 4 5

中文翻译

下载PDF

与AN4870相关器件

型号	品牌	获取价格	描述	数据表
AN48800A	PANASONIC	获取价格	Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation
AN48810B	PANASONIC	获取价格	Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation
AN48820A	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO3, MINI-3DR, SMD-3
AN48820B	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO5, MINI-5DA PACKAGE-5
AN48830A	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO3, MINI-3DRA PACKAGE-3
AN48830B	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO5, SMINI-5D, SMD-5
AN48836B	PANASONIC	获取价格	Analog Circuit, 1 Func, PDSO5, SMINI-5
AN48836B-NL	PANASONIC	获取价格	Sensor/Transducer, Open-drain, BICMOS, 5 Pin, Plastic/epoxy
AN48841B	PANASONIC	获取价格	Low current consumption, high sensitivity CMOS Hall IC Operates on Alternating Magnetic Fi
AN488XX	PANASONIC	获取价格	Surface Mount, Hall Effect Latches, Magnetic

与AN4870相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

5
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

AN4870

AN4870 数据手册

与AN4870相关器件

与AN4870相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AN4870

AN4870 数据手册

与AN4870相关器件

与AN4870相关文章

您还可以找

您在本页遇到什么问题？