Datasheet > AN4840

AN4840

更新时间： 2024-11-13 23:30:31

品牌	Logo	应用领域
其他 - ETC		栅极
页数	文件大小	规格书
5页	81K
描述
Gate triggering and the use of gate characteristics

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AN4840 数据手册

AN4840 Application Note

TGD-1X

AN4840

Gate Triggering And Gate Characteristics

Application Note

Replaces September 2000 version, AN4840-3.0

AN4840-3.1 July 2002

INFORMATION PROVIDED BY CURVES

I_GTand V_GT

In all thyristor datasheets a set of curves showing device gate

characteristics is given. This gives information fundamental to

the correct triggering of the thyristor but the right interpretation

sometimes causes problems. Note, the curves should be used

in conjunction with the table of ratings and trigger characteristics

givenelsewhereineachdatasheet. Thistablegivestherelevant

test conditions.

The value of gate current, I_Gand voltage, V_Gto be supplied to the

thyristortoguaranteesimpletriggeringshouldalwaysbegreater

than the appropriate data book values of I_GTand V_GT. Simple

triggering is adequate for low di/dt applications only - see below.

Note, that although the device may trigger at I_Gand V_G

values below the I_GTand V_GTvalues shown, no guarantee can be

given.

In this application note two types of gate curve are shown for

DCR1596SW (Fig. 1a to c). Fig 1(a) shows the traditional format

with logarithmic ‘X’ and ‘Y’ axes. This version allows a wide

range of gate current and voltage to be shown. Fig 1(b) and 1(c)

show curves with linear axes (2 graphs are needed to be the

equivalent of Fig 1(a)). When gate drive load lines are to be

superimposedlinearversionsaremuchmoreuserfriendly - see

below.

I_GDand V_GDare the values of I_Gand V_Gbelow which the thyristor

can be guaranteed NOT to fire. This is important for guarding

against spurious triggering. Because it is very dependent on

applied anode - cathode voltage and junction temperature I_GDis

not provided as standard information in datasheets. However,

test information can be provided by the factory in many cases.

100

Table gives pulse power P_GMin Watts

Pulse Width Frequency Hz

50 100 400

150 150 150

150 150 125

150 150 100

150 100 25

µs

100

200

500

1ms

10ms

V_FGM

150W

100W

50W

Load line 20V, 10Ω

20W

10W

V_GD

0.1

0.001

0.01

0.1

1.0

Gate trigger current I_GT- (A)

Fig.1a

1/5

www.dynexsemi.com

12 3 4 5

中文翻译

下载PDF

与AN4840相关器件

型号	品牌	获取价格	描述	数据表
AN4853	ETC	获取价格	Thyristor and diode measurement with a multi-meter
AN4869	DYNEX	获取价格	Power Assemblies
AN4870	ETC	获取价格	The effect of temperature on thyristor performance
AN48800A	PANASONIC	获取价格	Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation
AN48810B	PANASONIC	获取价格	Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation
AN48820A	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO3, MINI-3DR, SMD-3
AN48820B	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO5, MINI-5DA PACKAGE-5
AN48830A	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO3, MINI-3DRA PACKAGE-3
AN48830B	PANASONIC	获取价格	Analog Circuit, 1 Func, CMOS, PDSO5, SMINI-5D, SMD-5
AN48836B	PANASONIC	获取价格	Analog Circuit, 1 Func, PDSO5, SMINI-5