AN4504 Application Note
AN4504
IGBT Ratings And Characteristics
Application Note
Replaces September 2000 version, AN4504-3.0
AN4504-3.1 July 2002
applications this diode acts as a free-wheeling diode or as a
protection diode. Fig. 2 illustrates the packages used by Dynex
Semiconductor.
Load
Collector
PNP
The following information attempts to give clear definitions of
the ratings parameters on a typical IGBT datasheet and
describes how the current and power ratings are derived.
VCE
VD
Rmod
2. IC CONTINUOUS COLLECTOR CURRENT:
The continuous collector current, IC, is rated for a given case
temperature (for example in the case of Dynex Semiconductor
IGBT module datasheets, the case temperature is specified
between the range of 70 to 85°C).
G
VGE
This current is defined as the maximum direct current that can
flow through the device while the case temperature is held at
the specified level, with the junction temperature rising to its
maximum permitted level due to the dissipated power of the
device.
Emitter
Fig. 1 IGBT equivalent circuit showing basic parameters
BASIC OPERATION AND INTRODUCTION OF
PARAMETERS
The value of IC that is quoted depends on the case temperature,
Tc that is to be specified, the maximum permitted junction
temperature, Tjmax, the junction to case thermal resistance Rth(j-c)
and the Vce(sat) value. Vce(sat) is dependant on the applied gate
emitter voltage Vge. This can be shown by:-
As illustrated in Fig. 1, when a positive voltage, Vge, above the
level of threshold voltage Vge(th), is applied between the gate and
emitter, the power MOSFET turns on. This generates a low
resistance path between the base and collector of the pnp
transistor causing it to turn on also. Provided Vge is great enough
the pnp transistor is driven into saturation and Vce falls to Vce(sat)
.
(IC at Tc) =
(Tjmax – Tc)
Some related parameters to this operation are the maximum
rated pulsed collector current, Icm and maximum power
dissipation, Ptot.
(Vce(sat) at IC at Tjmax) x Rth(j-c)
To turn the IGBT off the gate emitter voltage is set to zero, which
first causes the MOSFET to turn off and then the pnp transistor.
For a constant power source, when the gate emitter voltage is
increased, the collector emitter saturation voltage reduces and
the collector current increases. This can be seen in Fig. 3. Fig.
4 shows how the rated collector current varies with case
temperature.
1. RATINGS:
Ratings are the maximum values of parameters such as current,
voltage, temperature, power dissipation etc., recommended by
manufacturers for their product types. To achieve reliable and
long term operation of a device, it is imperative to operate the
device within the specified device ratings.
V
ces - Continuous collector to emitter voltage
The continuous collector to emitter voltage, otherwise known
as the device blocking voltage, is the maximum voltage that the
collector to emitter junction can support. With the gate and
emitter terminals shorted together (over the full operating
temperature range).
After the fabrication of Dynex Semiconductor IGBT die, they
are assembled onto power substrates and assembled in to plastic
modules, etc.
An IGBT module consists of one or more substrates connected
in parallel to achieve high current handling capability. An inverse
parallel diode is also connected across the IGBT and in most
1/10
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