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AN-937

更新时间： 2024-02-28 19:38:48
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Gate Drive Characteristics and Requirements for HEXFET

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AN-937 数据手册

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Index  
AN-9 3 7 (v.In t )  
Gate Drive Characteristics and Requirements for  
HEXFET®s  
Topics covered:  
Gate drive vs base drive  
Enhancement vs Depletion  
N vs P-Channel  
Max gate voltage  
Zener diodes on gate?  
The most important factor in gate drive: the impedance of the gate drive circuit  
Switching 101 or Understanding the waveforms  
What happens if gate drive impedance is high? dv/dt induced turn-on  
Can a TTL gate drive a standard HEXFET®?  
The universal buffer  
Power dissipation of the gate drive circuit is seldom a problem  
Can a C-MOS gate drive a standard HEXFET®?  
Driving HEXFET®s from linear circuits  
Drive circuits not referenced to ground  
Gate drivers with optocouplers  
Gate drive supply developed from the drain of the power device  
Gate drivers with pulse transformers  
Gate drivers with choppers  
Drive requirements of Logic Level HEXFET®s  
How fast is a Logic Level HEXFET®driven by a logic circuit?  
Simple and inexpensive isolated gate drive supplies  
A well-kept secret: Photovoltaic generators as gate drivers  
Driving in the MHz? Use resonant gate drivers  
Related topics  
(Note: Most of the gate drive considerations and circuits are equally applicable to IGBTs. Only MOSFETs are mentioned for the  
sake of simplicity. Special considerations for IGBTs are contained in INT-990)  
1 . GATE DRIVE VS BASE DRIVE  
The conventional bipolar  
CURRENT  
IN BASE  
PRODUCES  
CURRENT  
IN COLLECTOR  
transistor is a current-driven  
device. As illustrated in  
Figure 1(a). a current must  
be applied between the base  
and emitter terminals to pro-  
duce a flow of current in the  
collector. The amount of a  
drive required to produce a  
given output depends upon  
the gain, but invariably a  
current must be made to flow  
into the base terminal to  
produce a flow of current in  
the collector.  
VOLTAGE  
AT GATE  
PRODUCES  
CURRENT  
IN DRAIN  
+
+
+
IC  
ID  
IB  
CURRENT  
SOURCE  
VOLTAGE  
SOURCE  
(a) Bipolar Transistor  
(b) HEXFET  
Figure 1. Bipolar Transistor is Current Driven, HEXFET is Voltage Driven  
The HEXFET®is fundamentally different: it is a voltage-controlled power MOSFET device. A voltage must be applied between  
the gate and source terminals to produce a flow of current in the drain (see Figure 1b). The gate is isolated electrically from the  
source by a layer of silicon dioxide. Theoretically, therefore, no current flows into the gate when a DC voltage is applied to it -  
though in practice there will be an extremely small current, in the order of nanoamperes. With no voltage applied between the  
gate and source electrodes, the impedance between the drain and source terminals is very high, and only the leakage current  
flows in the drain.  
To Order  
 
 
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