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AN-0002

更新时间： 2024-09-15 12:55:47

品牌	Logo	应用领域
ANADIGICS		放大器功率放大器
页数	文件大小	规格书
6页	59K
描述
Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers

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MESFET Amplifier Biasing

AN-0002

Biasing Circuits and Considerations for

GaAs MESFET Power Amplifiers

Summary

In order to properly use any amplifier it is necessary to provide the correct operating environment,

especially the DC bias. This application note outlines some of the considerations for biasing MESFET

amplifiers. Items considered herein are:

•

Constant current operation,

Temperature compensation of the biasing network, and

Power sequencing of the applied voltages.

Overview

The I-V curves of Figure 1 represent a typical MESFET device in a common source configuration. For a

typical device operating in Class A the desired current is 50% of the maximum current for any particular

part. Typical MESFET devices are depletion mode, meaning that the highest drain-source current occurs

for a gate voltage of approximately zero (Vgg ~ +0.5 V). As the gate voltage becomes more negative, the

device current drops and eventually approaches zero at the pinch-off voltage. The two main variables in

the production of MESFET power amplifiers are the maximum current and the pinch-off voltage. Since

the operating voltage is assumed to be fixed by the available voltages in the system, it is the drain current

that should be monitored and controlled in order to provide consistent performance from unit to unit.

1.0

0.8

Vdd=1.200

0.6

Vgg=0.000

Ids.i=0.869

0.4

Vdd=7.000

Vgg=-1.100

Ids.i=0.337

0.2

0.0

Vdd

Figure 1. IV characteristics of a typical MESFET device.

05/2003

12 3 4 5 6

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