生命周期: | Active | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.60 | 风险等级: | 5.71 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | MIXER DIODE |
频带: | X BAND | 最大阻抗: | 250 Ω |
最小阻抗: | 100 Ω | JESD-30 代码: | O-LALF-W2 |
最大噪声指数: | 7 dB | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
脉冲输入最大功率: | 0.1 W | 认证状态: | Not Qualified |
子类别: | Microwave Mixer Diodes | 表面贴装: | NO |
技术: | SCHOTTKY | 端子形式: | WIRE |
端子位置: | AXIAL | 肖特基势垒类型: | LOW BARRIER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AMP9003-19 | ASI |
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Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-23 | ASI |
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Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-44 | ASI |
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Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-51 | ASI |
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Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-800 | ASI |
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Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-860 | ASI |
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Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-91 | ASI |
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Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP-9-146305-0 | FREESCALE |
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RF Power LDMOS Transistors | |
AMPA | EVERLIGHT |
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This precision optical performance oval LED is specifically designed for passenger informa | |
AMPAD708 | ADI |
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Ultralow Offset Voltage Dual Op Amp |