生命周期: | Active | 包装说明: | O-CEMW-N2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.60 | 风险等级: | 5.71 |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | MIXER DIODE | 频带: | X BAND |
最大阻抗: | 250 Ω | JESD-30 代码: | O-CEMW-N2 |
最大噪声指数: | 6.5 dB | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | MICROWAVE |
脉冲输入最大功率: | 0.1 W | 认证状态: | Not Qualified |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | NO LEAD | 端子位置: | END |
肖特基势垒类型: | LOW BARRIER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AMP9002-23 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 6.5dB Noise Figure, Silicon, | |
AMP9002-44 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 6.5dB Noise Figure, Silicon, | |
AMP9002-51 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 6.5dB Noise Figure, Silicon, | |
AMP9002-800 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 6.5dB Noise Figure, Silicon, | |
AMP9002-860 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 6.5dB Noise Figure, Silicon, | |
AMP9002-91 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 6.5dB Noise Figure, Silicon, | |
AMP9003 | ASI |
获取价格 |
Diode, | |
AMP9003-01 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-19 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, | |
AMP9003-23 | ASI |
获取价格 |
Mixer Diode, Low Barrier, X Band, 250ohm Z(V) Max, 7dB Noise Figure, Silicon, |